|
Power - Max | 750mW |
Input Capacitance (Ciss) @ Vds | 940pF @ 25V |
Gate Charge (Qg) @ Vgs | 7.7nC @ 4.5V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 4.9A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 7.5A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOICN |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
78L05AC(SO-8) | ||||||||
ACT4060SH | DC/DC Преобразователь напряжения (Step-Down) 1.3-20V/2A, Fmax=400kHz | ACTIVE | ||||||
ACT4060SH | DC/DC Преобразователь напряжения (Step-Down) 1.3-20V/2A, Fmax=400kHz | ACT | ||||||
ACT4060SH | DC/DC Преобразователь напряжения (Step-Down) 1.3-20V/2A, Fmax=400kHz | 493.60 | ||||||
SI4835BDY-T1 | SILICONIX | 111 | ||||||
STM32F100C8T6B | ST MICROELECTRONICS | 509 | 279.53 | |||||
STM32F100C8T6B | 1 192 | 202.98 | ||||||
STM32F100C8T6B | STMicroelectronics | |||||||
STM32F100C8T6B | МАЛАЙЗИЯ | |||||||
STM32F100C8T6B | ST MICROELECTRONICS SEMI | |||||||
STM32F100C8T6B | ST MICROELECTRO | |||||||
STM32F100C8T6B | STMICROELECTR | |||||||
ТОКОПРОВОДЯЩИЙ КЛЕЙ КОНТАКТОЛ 5Г |
|