| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Серия | PowerTrench® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 6.2A, 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 6.2A, 4.4A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 760pF @ 20V |
| Power - Max | 900mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Mold Compound Change 12/Dec/2007 |
Версия для печати
