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MOSFET 2N-CH 20V 7A 8-SOIC |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Серия | HEXFET® |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 7A, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 7A |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 1340pF @ 16V |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
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Корзина
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