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MOSFET N/P-CH 55V 8-SOIC |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | N and P-Channel |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 4.7A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 4.7A, 3.4A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 36nC @ 10V |
Input Capacitance (Ciss) @ Vds | 740pF @ 25V |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
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