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MOSFET N-CH 20V 26A PQFN |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 20A, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 26A |
Vgs(th) (Max) @ Id | 1.1V @ 50µA |
Gate Charge (Qg) @ Vgs | 78nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 3620pF @ 10V |
Power - Max | 2.7W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-VQFN Exposed Pad |
Корпус | PQFN (3x3) |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
3131-LQH88PN2.2UHN | MURATA |
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ATTINY85V-10SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash,512 bytes EEPROM, 512bytes SRAM, 2-ch ... | ATMEL |
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ATTINY85V-10SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash,512 bytes EEPROM, 512bytes SRAM, 2-ch ... |
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ATTINY85V-10SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash,512 bytes EEPROM, 512bytes SRAM, 2-ch ... | MICRO CHIP |
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ATTINY85V-10SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash,512 bytes EEPROM, 512bytes SRAM, 2-ch ... | 4-7 НЕДЕЛЬ | 635 |
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RC1206JR-072KL | YAGEO | 656 607 |
0.69 >500 шт. 0.23 |
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RC1206JR-072KL | YAGEO |
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RC1206JR-072KL |
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RC1206JR-072KL | PHY |
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RC1206JR-073K3L | YAGEO | 452 532 |
0.66 >500 шт. 0.22 |
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RC1206JR-073K3L | YAGEO | 2 500 |
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RC1206JR-073K3L |
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TS5A3159DCKR | TEXAS INSTRUMENTS |
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TS5A3159DCKR | TEXAS INSTRUMENTS | 231 |
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TS5A3159DCKR | 2 540 | 15.37 | ||||||
TS5A3159DCKR | TEXAS | 5 036 | 20.18 | |||||
TS5A3159DCKR | 4-7 НЕДЕЛЬ | 64 |
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Корзина
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