MOSFET N-CH 55V 2.1A SOT23 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 2.1A, 4.5V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 2.1A |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) @ Vgs | 3.3nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 300pF @ 25V |
Power - Max | 1.25W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | SOT-23-3 |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
SI2308BDS-T1-GE3 | VISHAY | 1 600 | 47.23 | |||||
SI2308BDS-T1-GE3 | 8 | 100.48 | ||||||
SI2308BDS-T1-GE3 | Vishay/Siliconix | |||||||
SI2308BDS-T1-GE3 | SILICONIX | 128 | ||||||
SI2308BDS-T1-GE3 | VISHAY | |||||||
ST-LINK/V2 (MINI) | WAVESHARE | |||||||
STM32F101CBT6 | PBF LQFP48 | ST MICROELECTRONICS | ||||||
STM32F101CBT6 | PBF LQFP48 | STMicroelectronics | ||||||
STM32F101CBT6 | PBF LQFP48 | ST MICROELECTRONICS SEMI | ||||||
STM32F101CBT6 | PBF LQFP48 | КИТАЙ | ||||||
STM32F101CBT6 | PBF LQFP48 | 1 184 | 352.00 |
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