MOSFET P-CH 60V 4A 8-SOIC |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 4A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 4A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1120pF @ 30V |
Power - Max | 3.1W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SOIC |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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TPS54160DGQ | TEXAS INSTRUMENTS | |||||||
TPS54160DGQ | ||||||||
TPS54160DGQ | СОЕДИНЕННЫЕ ШТА | |||||||
TPS54160DGQ | TEXAS | |||||||
TPS54160DGQ | TEXAS INSTRUMENTS | 5 | ||||||
TPS54160DGQ | TEXASINSTRUMENTS |
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