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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | UniFET™ |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 265 mOhm @ 9A, 10V |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 18A |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2860pF @ 25V |
Power - Max | 235W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220 |
FDP18N50 (MOSFET) 500V N-Channel MOSFET
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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ICE2PCS02G | INFINEON |
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ICE2PCS02G | Infineon Technologies |
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ICE2PCS02G |
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ICE2PCS02G |
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IRF3205Z |
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Hexfet power mosfets discrete n-channel | INTERNATIONAL RECTIFIER |
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IRF3205Z |
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Hexfet power mosfets discrete n-channel |
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329.20 | ||
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IRF3205Z |
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Hexfet power mosfets discrete n-channel | INFINEON |
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SPP21N50C3 |
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N-MOS 600V, 20A, 208W | INFINEON |
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SPP21N50C3 |
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N-MOS 600V, 20A, 208W | Infineon Technologies |
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SPP21N50C3 |
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N-MOS 600V, 20A, 208W |
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SPP21N50C3 |
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N-MOS 600V, 20A, 208W | INFINEON |
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SPW35N60C3 | INFINEON |
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SPW35N60C3 |
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960.00 | |||||
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SPW35N60C3 | Infineon Technologies |
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SPW35N60C3 | КИТАЙ |
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STTH12R06DIRG | ST MICROELECTRONICS | 224 | 198.36 | |||||
STTH12R06DIRG | STMicroelectronics |
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STTH12R06DIRG |
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STTH12R06DIRG | ST MICROELECTRO |
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Корзина
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