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FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 43 mOhm @ 4.5A, 4.5V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 4.5A |
Vgs(th) (Max) @ Id | 1.5V @ 1mA |
Gate Charge (Qg) @ Vgs | 10.7nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 540pF @ 10V |
Power - Max | 1.25W |
Тип монтажа | Поверхностный |
Корпус (размер) | TSMT6 |
Корпус | TSMT6 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
1SMA5915BT3 | ON SEMICONDUCTOR | |||||||
1SMA5915BT3 | ON SEMICONDUCTOR | 5 008 | ||||||
1SMA5915BT3G | ON Semiconductor | |||||||
1SMA5915BT3G | ON SEMICONDUCTOR | |||||||
1SMA5915BT3G | ||||||||
W25Q32FVSSIG | WINBOND | |||||||
W25Q32FVSSIG | 3 | 108.00 | ||||||
W25Q32FVSSIG | WIN | |||||||
W25Q32FVSSIG | WINBOND | 96 | 88.38 | |||||
W25Q32FVSSIG | 1 |
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