FQP2N60C
2.0a, 600v n-channel mosfet
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 235pF @ 25V |
| Power - Max | 54W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220 |
| Product Change Notification | Passivation Material Change 14/May/2008 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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FQP2N60C 600V N-Channel MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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DC COMPONENTS | 96 677 | 2.00 | ||
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MCC |
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PANJIT | 307 692 |
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EXTRA |
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КИТАЙ | 800 | 6.12 | ||
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JUXING | 125 | 2.38 | ||
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TDA7294 |
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УHЧ DMOS, 2x70W (2x35V/8 Ом), THD<0.5%, max 2x100W | ST MICROELECTRONICS |
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TDA7294 |
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УHЧ DMOS, 2x70W (2x35V/8 Ом), THD<0.5%, max 2x100W |
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229.48 | ||
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КР1026УН1 | ОРБИТА |
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КР1026УН1 |
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100.80 | |||||
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КР1026УН1 | ГРАВИТОН |
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КР1026УН1 | САРАНСК |
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МП10 |
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12 | 82.80 | ||||
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БЕЛОВО |
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1 |
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