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FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 1.7A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) @ Vds | 310pF @ 25V |
Power - Max | 1.3W |
Тип монтажа | Выводной |
Корпус (размер) | 4-DIP (0.300", 7.62mm) |
Корпус | 4-DIP, Hexdip, HVMDIP |
IRFD014 (N-канальные транзисторные модули) Power Mosfet (vdss=60v, Rds (on) =0.20ohm, Id=1.7a)
Производитель:
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