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Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 240mA, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 400mA |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 8.9nC @ 10V |
Input Capacitance (Ciss) @ Vds | 170pF @ 25V |
Power - Max | 1W |
Тип монтажа | Выводной |
Корпус (размер) | 4-DIP (0.300", 7.62mm) |
Корпус | 4-DIP, Hexdip, HVMDIP |
IRFD9210 (P-канальные транзисторные модули) Power Mosfet (vdss=-200v, Rds (on) =3.0ohm, Id=-0.40a)
Производитель:
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