MOSFET P-CH 30V 9.8A 8SOIC |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 12.1 mOhm @ 7.8A, 20V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 9.8A |
Vgs(th) (Max) @ Id | 2.4V @ 25µA |
Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 1270pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | SO-8 |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IRF7452 | Hexfet power mosfets discrete n-channel | INTERNATIONAL RECTIFIER | ||||||
IRF7452 | Hexfet power mosfets discrete n-channel | 221.60 | ||||||
IRF7452 | Hexfet power mosfets discrete n-channel | INFINEON | ||||||
IRF7452 | Hexfet power mosfets discrete n-channel | IR/VISHAY | 8 | 94.46 | ||||
MJD44H11T4G | ON SEMICONDUCTOR | |||||||
MJD44H11T4G | ONS | |||||||
MJD44H11T4G | ON SEMIC | |||||||
MJD44H11T4G | ON SEMICONDUCTOR | 480 | ||||||
MJD44H11T4G | ONSEMICONDUCTOR | |||||||
MJD44H11T4G | 2 | 61.20 | ||||||
MJD45H11T4G | ON SEMICONDUCTOR | |||||||
MJD45H11T4G | ONS | |||||||
MJD45H11T4G | ON SEMICONDUCTOR | 446 | ||||||
MJD45H11T4G | ON SEMIC | |||||||
MJD45H11T4G | ONSEMICONDUCTOR | |||||||
MJD45H11T4G | ON SEMICONDUCTO | |||||||
MJD45H11T4G | ||||||||
ТП112-11 (ТП132-11) | RUS | |||||||
ТП112-11 (ТП132-11) | НПК-КОМПЛЕКС | |||||||
ТП112-11 (ТП132-11) | КОМПЛЕКС |
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