STP80PF55
P-channel 55v - 0.016? - 80a - d2pak stripfet™ ii power mosfet
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | STripFET™ |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 40A, 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 258nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 5500pF @ 25V |
| Power - Max | 300W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 |
| Корпус | TO-220AB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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STP80PF55 (MOSFET) P-channel 55V - 0.016? - 80A - D2PAK STripFET™ II Power MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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DC COMPONENTS | 66 513 | 2.00 | ||
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MCC |
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MIC | 285 683 | 1.40 | ||
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DIOTEC | 77 582 | 3.12 | ||
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ON SEMICONDUCTOR |
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LD |
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MS |
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FAIRCHILD | 288 |
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GENERAL SEMICONDUCTOR | 1 |
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LITE ON OPTOELECTRONICS |
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ON SEMICONDUCTOR |
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PANJIT | 307 692 |
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PHILIPS |
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MICROSEMI CORP |
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KINGTRONICS |
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YJ | 351 009 | 1.60 | ||
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EXTRA |
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КИТАЙ | 800 | 6.12 | ||
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MD |
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1.92 >100 шт. 0.96 |
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GALAXY ME |
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LGE | 55 | 1.87 | ||
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HOTTECH | 88 870 | 1.42 | ||
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KLS | 32 800 | 2.95 | ||
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YANGJIE | 11 200 | 1.73 | ||
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CHINA | 15 317 | 1.02 | ||
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BL |
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SUNTAN | 97 609 | 2.18 | ||
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TWGMC | 80 946 |
1.08 >100 шт. 0.54 |
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CTK |
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JUXING | 125 | 2.58 | ||
| КТ 3102 А | RUS |
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| МЛТ-0,25-10 КОМ-2% |
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| МЛТ-0,25-5,6 КОМ-5% | 650 | 3.60 | ||||||
| МЛТ-0,25-56 КОМ-5% | 650 | 3.60 |
