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Gate Charge (Qg) @ Vgs | 25nC @ 11.5V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 8.8A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 6.95 mOhm @ 30A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 1400pF @ 12V |
Power - Max | 870mW |
Тип монтажа | Поверхностный |
Корпус (размер) | 5-DFN, SO8 FL |
Корпус | 6-DFN, 8-SO Flat Lead (5x6) |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
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2SA1469 |
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Биполярный транзистор | SANYO |
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2SA1469 |
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Биполярный транзистор | 1 | 187.20 | |||
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2SA1469 |
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Биполярный транзистор | SAN |
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2SA1469 |
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Биполярный транзистор | КИТАЙ |
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2SC3746 |
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NPN lo-sat, 80V, 5A, 20W, 100MHz | SANYO |
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2SC3746 |
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NPN lo-sat, 80V, 5A, 20W, 100MHz |
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400.00 | ||||
2SC3746 |
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NPN lo-sat, 80V, 5A, 20W, 100MHz | SAN |
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2SC3746 |
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NPN lo-sat, 80V, 5A, 20W, 100MHz | ISC |
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2SC3746 |
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NPN lo-sat, 80V, 5A, 20W, 100MHz | ISCSEMI |
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MAX4789EUK+T | MAXIM |
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MAX4789EUK+T | MAXIM |
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MAX4789EUK+T | Maxim Integrated Products |
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MAX4789EUK+T |
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NTMFS4833NT1G | ONS |
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NTMFS4833NT1G | ON Semiconductor |
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NTMFS4833NT1G | ON SEMICONDUCTOR | 128 |
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NTMFS4833NT1G |
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449.20 |
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Корзина
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