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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | QFET™ |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 1.8A, 10V |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 3.6A |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1000pF @ 25V |
Power - Max | 44W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 Full Pack |
Корпус | TO-220F |
FQP6N60C 600V N-Channel MOSFET Также в этом файле: FQPF6N60C
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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AN7551Z | MATSUSHITA |
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AN7551Z |
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AN7551Z | MAT |
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L9637D013TR |
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ST MICROELECTRONICS |
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L9637D013TR |
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165.80 | |||
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L9637D013TR |
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ST MICROELECTRONICS SEMI |
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L9637D013TR |
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STMicroelectronics |
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L9637D013TR |
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КИТАЙ |
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MMBF170LT1G |
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Транзистор | ON SEMICONDUCTOR |
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MMBF170LT1G |
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Транзистор | ONS |
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MMBF170LT1G |
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Транзистор |
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18.40 | |||
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MMBF170LT1G |
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Транзистор | ON SEMICONDUCTOR |
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MMBF170LT1G |
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Транзистор | ON SEMIC |
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MMBF170LT1G |
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Транзистор | ONS-FAIR |
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MMBF170LT1G |
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Транзистор | VBSEMI | 5 504 | 4.28 | ||
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PC817 |
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Оптопаpа CTR 50%(5mA), Vce=35V | SHARP |
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PC817 |
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Оптопаpа CTR 50%(5mA), Vce=35V | 4 | 19.36 | ||
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PC817 |
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Оптопаpа CTR 50%(5mA), Vce=35V | SHARP |
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PC817 |
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Оптопаpа CTR 50%(5mA), Vce=35V | КИТАЙ |
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PC817 |
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Оптопаpа CTR 50%(5mA), Vce=35V | FAIRCHILD |
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TDA8571J (CU) |
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Усилитель низкой частоты 4x26W BTL (14.4V/4 Ом), max 4x40W, Gv=34dB | NXP |
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TDA8571J (CU) |
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Усилитель низкой частоты 4x26W BTL (14.4V/4 Ом), max 4x40W, Gv=34dB |
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Корзина
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