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Корпус | D2PAK |
Current - Continuous Drain (Id) @ 25° C | 10A |
Drain to Source Voltage (Vdss) | 400V |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 6A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Тип монтажа | Поверхностный |
Power - Max | 3.1W |
Input Capacitance (Ciss) @ Vds | 1030pF @ 25V |
Gate Charge (Qg) @ Vgs | 36nC @ 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
IRF740AS (Дискретные сигналы) 400V Single N-channel HexFET Power MOSFET inA D2-Pak Package Также в этом файле: IRF740ASTRR
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
CI160808-18NJ | BOURNS | 1 | 10.82 | |||||
CI160808-18NJ | ||||||||
CI160808-1N8D | BOURNS | 38 | 15.82 | |||||
CI160808-1N8D | ||||||||
LQW18AN2N2D00D | Murata Electronics North America | |||||||
LQW18AN2N2D00D | MUR | 29 908 | 3.45 | |||||
LQW18AN2N2D00D | ||||||||
LQW18AN2N2D00D | MURATA | 2 850 | 9.60 | |||||
LQW18AN6N2C00D | MURATA | 2 080 | 10.89 | |||||
LQW18AN6N2C00D | MUR | 8 630 | 2.70 | |||||
LQW18AN6N2C00D | ||||||||
S25FL032P0XMFI011 | SPANSION | |||||||
S25FL032P0XMFI011 | SPANSION | |||||||
S25FL032P0XMFI011 | CYPRESS | |||||||
S25FL032P0XMFI011 | CYPR | |||||||
S25FL032P0XMFI011 | SPA | |||||||
S25FL032P0XMFI011 | CYP | |||||||
S25FL032P0XMFI011 | ||||||||
S25FL032P0XMFI011 | CYPRESS |
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