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MOSFET P-CH 60V 1.9A SOT223 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | SIPMOS® |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 1.9A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 1.9A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) @ Vds | 410pF @ 25V |
Power - Max | 1.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | PG-SOT223-4 |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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BZT52C16-7 | DIODES |
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BZT52C16-7 | DIODES INC. | 1 064 |
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BZT52C16-7 | Diodes Inc |
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MMBT5087 | FAIR |
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MMBT5087 | FAIRCHILD |
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MMBT5087 | FAIRCHILD | 1 284 |
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MMBT5087 | Fairchild Semiconductor |
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MMBT5087 |
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MMBT5087 | ONS |
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MMBT5087 | ONS-FAIR |
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XTR111AIDGQR |
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Texas Instruments | 51 | 415.97 | ||
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XTR111AIDGQR |
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TEXAS |
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XTR111AIDGQR |
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284 | 106.61 |
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Корзина
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