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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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4.00
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTOR
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2 533
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMIC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ON SEMICONDUCTO
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONSEMICONDUCTOR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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ONS-FAIR
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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LRC
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2N7002LT1G |
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Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
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VBSEMI
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6 404
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2.69
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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63 844
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1.24
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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800
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10.20
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DIOTEC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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INFINEON
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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MCC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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DC COMPONENTS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY
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9 608
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1.74
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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OTHER
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12 800
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PHILIPS
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1 424
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ONS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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КИТАЙ
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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NXP
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7 139
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YJ
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415 170
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1.50
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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GALAXY ME
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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HOTTECH
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28 324
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1.19
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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LRC
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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KLS
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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PANJIT
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SEMTECH
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4
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3.28
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YANGJIE (YJ)
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YOUTAI
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64 689
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1.62
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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10 503
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2.22
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ZH
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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ASEMI
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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TRR
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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YIXING
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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1
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SUNTAN
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243 488
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1.26
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BC807-40 |
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Транзистор PNP (Uce=45V, Ic=0.5A, P=300mW, B=250-600@I=100mA, f>100MHz, -55 to +150C)
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SHIKUES
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GRM1885C1H431JA01D |
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Керамический конденсатор 430 пФ 50 В
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MUR
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38 889
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1.64
>100 шт. 0.82
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GRM1885C1H431JA01D |
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Керамический конденсатор 430 пФ 50 В
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GRM1885C1H431JA01D |
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Керамический конденсатор 430 пФ 50 В
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Murata Electronics North America
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GRM1885C1H431JA01D |
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Керамический конденсатор 430 пФ 50 В
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MURATA
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TAJB107K006RNJ |
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AVX
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52
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20.15
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TAJB107K006RNJ |
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AVX
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TAJB107K006RNJ |
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AVX Corporation
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TAJB107K006RNJ |
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1 600
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47.04
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TAJB107K006RNJ |
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KYOCERA-AVX
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WSL2010R0200FEA |
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Vishay/Dale
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WSL2010R0200FEA |
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VISHAY
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WSL2010R0200FEA |
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WSL2010R0200FEA |
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DALE
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