|
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
ICE3B0365J |
|
SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
|
INFINEON
|
|
|
|
|
|
ICE3B0365J |
|
SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
|
|
2
|
226.80
|
|
|
|
ICE3B0365J |
|
SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
|
Infineon Technologies
|
|
|
|
|
|
ICE3B0365J |
|
SMPS сх. упpавления, MOSFET 650V/Idp=0.3A, Pout=W
|
1
|
|
|
|
|
|
LD1117DT33CTR |
|
Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
|
ST MICROELECTRONICS
|
10 906
|
20.98
|
|
|
|
LD1117DT33CTR |
|
Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
LD1117DT33CTR |
|
Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
|
STMicroelectronics
|
|
|
|
|
|
LD1117DT33CTR |
|
Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
|
|
|
|
|
|
|
LD1117DT33CTR |
|
Линейный СН ``low drop`` (Vout=3.3V, tol=1%, I=1.0A, 0 to +125C, D-PAK(TO-252))
|
STMICROELECTR
|
|
|
|
|
|
S1M-E3/61T |
|
|
VISHAY
|
58 622
|
5.52
|
|
|
|
S1M-E3/61T |
|
|
|
3 600
|
4.33
|
|
|
|
S1M-E3/61T |
|
|
Vishay/General Semiconductor
|
|
|
|
|
|
S1M-E3/61T |
|
|
GENERAL SEMICONDUCTOR
|
796
|
|
|
|
|
TNY256P |
|
Интегральный Преобразователь Uвх 230VAC Pвых 8-15 W Umax 700V Imax 0,55A
|
PWR
|
|
|
|
|
|
TNY256P |
|
Интегральный Преобразователь Uвх 230VAC Pвых 8-15 W Umax 700V Imax 0,55A
|
PI
|
|
|
|
|
|
TNY256P |
|
Интегральный Преобразователь Uвх 230VAC Pвых 8-15 W Umax 700V Imax 0,55A
|
|
|
183.92
|
|
|
|
TNY256P |
|
Интегральный Преобразователь Uвх 230VAC Pвых 8-15 W Umax 700V Imax 0,55A
|
Power Integrations
|
|
|
|
|
|
TNY256P |
|
Интегральный Преобразователь Uвх 230VAC Pвых 8-15 W Umax 700V Imax 0,55A
|
КИТАЙ
|
|
|
|
|
|
Z0109MN 5AA4 |
|
|
ST MICROELECTRONICS
|
855
|
19.17
|
|
|
|
Z0109MN 5AA4 |
|
|
STMicroelectronics
|
|
|
|
|
|
Z0109MN 5AA4 |
|
|
|
|
|
|
|
|
Z0109MN 5AA4 |
|
|
STMICROELECTRO
|
|
|
|