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Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 470mA, 10V |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 790mA |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 8.2nC @ 10V |
Input Capacitance (Ciss) @ Vds | 140pF @ 25V |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | SOT-223 |
IRFL214 (MOSFET) HEXFET® Power MOSFET
Производитель:
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