| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Product Change Notification | Encapsulate Change 15/May/2008 |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 3.3K |
| Resistor - Emitter Base (R2) (Ohms) | 10K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Frequency - Transition | 200MHz |
| Power - Max | 200mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
Версия для печати
