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FET Type | MOSFET P-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 7 Ohm @ 1.1A, 10V |
Drain to Source Voltage (Vdss) | 400V |
Current - Continuous Drain (Id) @ 25° C | 1.8A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) @ Vds | 270pF @ 25V |
Power - Max | 50W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
IRFR9310 (MOSFET) HEXFET® Power MOSFET
Производитель:
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