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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 108A, 10V |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 180A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 380nC @ 10V |
Input Capacitance (Ciss) @ Vds | 10700pF @ 25V |
Power - Max | 480W |
Тип монтажа | Шасси |
Корпус (размер) | SOT-227-4, miniBLOC |
Корпус | SOT-227B |
FB180SA10 (Дискретные сигналы) Power Mosfet
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