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Корпус | MT-1-A1 |
Корпус (размер) | MT-1 |
Тип монтажа | Выводной |
Frequency - Transition | 200MHz |
Power - Max | 600mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 10mA, 10V |
Current - Collector Cutoff (Max) | 1µA |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 500mA |
Transistor Type | NPN |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
2SD1992A (Универсальные биполярные транзисторы) Silicon Npn Epitaxial Planer Type
Производитель:
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