IRF1407
Hexfet power mosfets discrete n-channel
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Версия для печати
| FET Type | MOSFET N-Channel, Metal Oxide |
| Серия | HEXFET® |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 7.8 mOhm @ 78A, 10V |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 250nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 5600pF @ 25V |
| Power - Max | 3.8W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-262-3 (Straight Leads) |
| Корпус | TO-262 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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IRF1407 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 66 337 | 1.76 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 265 463 | 1.40 | ||
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1N4007 |
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DIOTEC | 77 582 | 2.88 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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MS |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 290 387 | 1.45 | ||
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DIODES INC. |
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1N4007 |
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MIG |
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MICRO COMMERCIAL COMPONENTS |
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MOTOROLA |
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YJ ELE-NIC CORP |
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RECTIFIER |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 6.12 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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189 794 |
1.88 >100 шт. 0.94 |
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1N4007 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 64 072 | 1.97 | ||
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1N4007 |
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HOTTECH | 88 879 | 1.31 | ||
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1N4007 |
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KLS | 4 720 | 2.95 | ||
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1N4007 |
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YS |
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YANGJIE | 10 400 | 1.67 | ||
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YANGJIE (YJ) |
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MC |
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FAIRCHILD |
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WUXI XUYANG |
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KUU |
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CHINA | 15 317 | 1.02 | ||
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SUNRISETRON |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1 |
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BL |
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SUNTAN | 95 190 | 1.98 | ||
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1N4007 |
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TWGMC | 76 078 |
1.44 >500 шт. 0.48 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 125 | 2.35 | ||
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1N4007 |
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ASEMI | 19 968 | 1.19 | ||
| ECA-16-1000UF |
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Электролитический алюминиевый конденсатор 1000 мкФ 16 В | HITANO |
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| ECA-16-1000UF |
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Электролитический алюминиевый конденсатор 1000 мкФ 16 В |
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19.36 | ||||
| ECA-25-1000UF |
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Электролитический алюминиевый конденсатор 1000 мкФ 25 В | HITANO |
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| ECA-25-1000UF |
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Электролитический алюминиевый конденсатор 1000 мкФ 25 В |
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28.48 | ||||
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FYL-5013UWC/P |
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Единичный светодиод - 5mm/White/clear/If=20mA/2500 mcd, 30° | FORYARD |
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FYL-5013UWC/P |
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Единичный светодиод - 5mm/White/clear/If=20mA/2500 mcd, 30° |
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21.36 | |||
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FYL-5013UWC/P |
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Единичный светодиод - 5mm/White/clear/If=20mA/2500 mcd, 30° | КИТАЙ |
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