LG200M1000BPF-3040
Электролитический алюминиевый конденсатор 1000 мкФ 200 В
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Версия для печати
| Номинальное напряжение | 200 В |
| Емкость | 1000 мкФ |
| Серия | LG |
| Корпус (размер) | Snap In |
| Тип монтажа | Выводной |
| Тип | Электролитический алюминиевый |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 55 388 | 1.80 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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PANJIT |
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1N4007 |
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FSC |
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1N4007 |
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MCC |
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1N4007 |
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DIC |
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1N4007 |
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FAIR |
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1N4007 |
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PHILIPS |
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1N4007 |
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MIC | 253 060 | 1.47 | ||
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1N4007 |
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DIOTEC | 113 256 | 3.05 | ||
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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LD |
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1N4007 |
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JGD |
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1N4007 |
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MING SHUN |
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1N4007 |
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MS |
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1N4007 |
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QUAN-HONG |
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1N4007 |
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XR |
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1N4007 |
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GALAXY |
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1N4007 |
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COMPACT TECHNOLOGY |
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1N4007 |
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DC COMPONENTS |
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1N4007 |
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FAIRCHILD | 288 |
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1N4007 |
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GENERAL SEMICONDUCTOR | 1 |
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1N4007 |
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LITE ON OPTOELECTRONICS |
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1N4007 |
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MASTER INSTRUMENT CORPORATION |
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1N4007 |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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1N4007 |
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PANJIT | 307 692 |
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1N4007 |
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PHILIPS |
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1N4007 |
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TAIWAN SEMICONDUCTOR MANF. |
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1N4007 |
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YANGJIE SEMICONDUCT |
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1N4007 |
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Fairchild Semiconductor |
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1N4007 |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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1N4007 |
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MICROSEMI CORP |
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1N4007 |
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ТАЙВАНЬ(КИТАЙ) |
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1N4007 |
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GD |
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1N4007 |
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JC |
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1N4007 |
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KINGTRONICS |
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1N4007 |
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YJ | 241 484 | 1.37 | ||
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1N4007 |
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DIODES INC. |
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1N4007 |
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MIG |
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1N4007 |
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MICRO COMMERCIAL COMPONENTS |
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1N4007 |
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MOTOROLA |
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1N4007 |
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YJ ELE-NIC CORP |
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RECTIFIER |
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1N4007 |
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EXTRA COM-NTS |
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1N4007 |
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GALAXY ELECTRICAL |
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1N4007 |
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GEMBIRD |
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1N4007 |
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ТОМИЛИНО |
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1N4007 |
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EXTRA |
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1N4007 |
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КИТАЙ | 800 | 4.54 | ||
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1N4007 |
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DIOTEC SEMICONDUCTOR |
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1N4007 |
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MD |
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1N4007 |
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138 612 |
1.72 >100 шт. 0.86 |
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ONS-FAIR |
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1N4007 |
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ONS |
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1N4007 |
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ELZET |
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1N4007 |
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GALAXY ME |
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1N4007 |
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LGE | 44 880 | 1.03 | ||
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1N4007 |
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HOTTECH | 324 631 | 2.61 | ||
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1N4007 |
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KLS | 104 000 | 2.07 | ||
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YS |
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YANGJIE | 8 800 | 1.60 | ||
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YANGJIE (YJ) |
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MC |
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FAIRCHILD |
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WUXI XUYANG |
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KUU |
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1N4007 |
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CHINA | 14 485 | 1.09 | ||
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SUNRISETRON |
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1N4007 |
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UNKNOWN |
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1N4007 |
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BILIN |
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1N4007 |
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KEHE |
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1N4007 |
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1 |
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1N4007 |
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BL |
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1N4007 |
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SUNTAN | 95 175 | 1.94 | ||
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1N4007 |
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TWGMC | 53 086 |
1.41 >500 шт. 0.47 |
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1N4007 |
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CTK |
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1N4007 |
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JUXING | 123 | 2.08 | ||
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1N4007 |
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ASEMI | 5 826 | 1.16 | ||
| HER207 (2A 800V) |
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Транзистор полевой N-MOS 500В 20A, 280Вт | INTERNATIONAL RECTIFIER |
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IRFP460A |
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Транзистор полевой N-MOS 500В 20A, 280Вт | VISHAY |
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IRFP460A |
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Транзистор полевой N-MOS 500В 20A, 280Вт | 11 | 462.50 | ||
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IRFP460A |
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IRFP460A |
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Транзистор полевой N-MOS 500В 20A, 280Вт | КИТАЙ |
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IRFP460A |
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Транзистор полевой N-MOS 500В 20A, 280Вт | INTERSIL |
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IRFP460A |
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Транзистор полевой N-MOS 500В 20A, 280Вт | 1 |
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| MF-0.25 1.1M 1% |
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MF-0.25-680 5% |
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Резистор постоянный металлодиэлектрический 0.25Вт, 680Ом, 5% | CHINA |
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MF-0.25-680 5% |
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Резистор постоянный металлодиэлектрический 0.25Вт, 680Ом, 5% | 88 | 2.84 |
