|
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
LP2951-33DR |
|
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
LP2951-33DR |
|
|
TEXAS INSTRUMENTS
|
|
|
|
|
|
LP2951-33DR |
|
|
TEXAS
|
13 402
|
37.24
|
|
|
|
LP2951-33DR |
|
|
|
6 720
|
25.31
|
|
|
|
LP2951-33DR |
|
|
TEXASINSTRUMENTS
|
|
|
|
|
|
MCP1700T-3302E/TT |
|
CН ``low-drop`` с низким потреблен (Vo=3.3:Vi=2,3.6V:Io=0,25A:tol>0.4%:t=-40.+125C)
|
MICRO CHIP
|
11 416
|
31.65
|
|
|
|
MCP1700T-3302E/TT |
|
CН ``low-drop`` с низким потреблен (Vo=3.3:Vi=2,3.6V:Io=0,25A:tol>0.4%:t=-40.+125C)
|
MICRO CHIP
|
|
|
|
|
|
MCP1700T-3302E/TT |
|
CН ``low-drop`` с низким потреблен (Vo=3.3:Vi=2,3.6V:Io=0,25A:tol>0.4%:t=-40.+125C)
|
Microchip Technology
|
|
|
|
|
|
MCP1700T-3302E/TT |
|
CН ``low-drop`` с низким потреблен (Vo=3.3:Vi=2,3.6V:Io=0,25A:tol>0.4%:t=-40.+125C)
|
|
5 819
|
24.60
|
|
|
|
MCP1700T-3302E/TT |
|
CН ``low-drop`` с низким потреблен (Vo=3.3:Vi=2,3.6V:Io=0,25A:tol>0.4%:t=-40.+125C)
|
ТАИЛАНД
|
|
|
|
|
|
MCP1700T-3302E/TT |
|
CН ``low-drop`` с низким потреблен (Vo=3.3:Vi=2,3.6V:Io=0,25A:tol>0.4%:t=-40.+125C)
|
1
|
|
|
|
|
|
STM32F100C6T6B |
|
|
ST MICROELECTRONICS
|
249
|
345.94
|
|
|
|
STM32F100C6T6B |
|
|
STMicroelectronics
|
|
|
|
|
|
STM32F100C6T6B |
|
|
ST MICROELECTRONICS SEMI
|
58
|
|
|
|
|
STM32F100C6T6B |
|
|
|
414
|
259.98
|
|
|
|
STM32F100C6T6B |
|
|
STMICROELECTR
|
|
|
|
|
|
STM32F100C8T6B |
|
|
ST MICROELECTRONICS
|
860
|
293.50
|
|
|
|
STM32F100C8T6B |
|
|
|
1 112
|
176.98
|
|
|
|
STM32F100C8T6B |
|
|
STMicroelectronics
|
|
|
|
|
|
STM32F100C8T6B |
|
|
МАЛАЙЗИЯ
|
|
|
|
|
|
STM32F100C8T6B |
|
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
STM32F100C8T6B |
|
|
ST MICROELECTRO
|
|
|
|
|
|
STM32F100C8T6B |
|
|
STMICROELECTR
|
|
|
|
|
|
STM32F100CBT6B |
|
|
ST MICROELECTRONICS
|
378
|
502.90
|
|
|
|
STM32F100CBT6B |
|
|
STMicroelectronics
|
|
|
|
|
|
STM32F100CBT6B |
|
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
STM32F100CBT6B |
|
|
|
140
|
484.09
|
|
|
|
STM32F100CBT6B |
|
|
КИТАЙ
|
|
|
|
|
|
STM32F100CBT6B |
|
|
STMICROELECTR
|
|
|
|