| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Power - Max | 225mW |
| Frequency - Transition | 200MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Wire Change 08/May/2007 Possible Adhesion Issue 11/July/2008 |
| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
 |
 |
AP40T03GP |
|
Тип транзистора полевой, МОП n-канальный 30В, 28А, 31,25Вт
|
APEC
|
|
|
|
|
|
|
AP40T03GP |
|
Тип транзистора полевой, МОП n-канальный 30В, 28А, 31,25Вт
|
|
|
306.00
|
|
|
|
|
BIT3713 |
|
|
BITEK
|
|
|
|
|
|
|
BIT3713 |
|
|
BIT
|
|
|
|
|
|
|
BIT3713 |
|
|
|
|
282.80
|
|
|
|
|
IRF7389 |
|
Транзистор полевой SMD P/N-MOS 30V, -5.3/7.3A, 2.5W
|
INTERNATIONAL RECTIFIER
|
|
|
|
|
|
|
IRF7389 |
|
Транзистор полевой SMD P/N-MOS 30V, -5.3/7.3A, 2.5W
|
|
2
|
604.80
|
|
|
|
|
IRF7389 |
|
Транзистор полевой SMD P/N-MOS 30V, -5.3/7.3A, 2.5W
|
INTERNATIONAL RECTIFIER
|
204
|
|
|
|
|
|
IRF7389 |
|
Транзистор полевой SMD P/N-MOS 30V, -5.3/7.3A, 2.5W
|
ТАИЛАНД
|
|
|
|
|
|
|
IRF7389 |
|
Транзистор полевой SMD P/N-MOS 30V, -5.3/7.3A, 2.5W
|
INFINEON
|
|
|
|
|
|
|
IRF7389 |
|
Транзистор полевой SMD P/N-MOS 30V, -5.3/7.3A, 2.5W
|
1
|
|
|
|
|
|
|
IRF7389 |
|
Транзистор полевой SMD P/N-MOS 30V, -5.3/7.3A, 2.5W
|
EVVO
|
10 064
|
18.93
|
|
|
|
|
MMBT4401LT1G |
|
(SMD) SOT23
|
ON SEMICONDUCTOR
|
|
|
|
|
|
|
MMBT4401LT1G |
|
(SMD) SOT23
|
|
|
24.00
|
|
|
|
|
MMBT4401LT1G |
|
(SMD) SOT23
|
ONS
|
1
|
10.82
|
|
|
|
|
MMBT4401LT1G |
|
(SMD) SOT23
|
ON SEMICONDUCTOR
|
130
|
|
|
|
|
|
MMBT4401LT1G |
|
(SMD) SOT23
|
ON SEMIC
|
|
|
|
|
|
|
MMBT4401LT1G |
|
(SMD) SOT23
|
ON SEMICONDUCTO
|
|
|
|
|
|
|
MMBT4401LT1G |
|
(SMD) SOT23
|
ONSEMICONDUCTOR
|
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
|
3 980
|
46.60
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
STMicroelectronics
|
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
ST MICROELECTR
|
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
КИТАЙ
|
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
ST MICROELECTRO
|
|
|
|
Версия для печати
