![]() |
|
FET Feature | Standard |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 3.4A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 47nC @ 10V |
Input Capacitance (Ciss) @ Vds | 660pF @ 50V |
Power - Max | 79W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
IRLR9343 (MOSFET) HEXFET Power MOSFETs Discrete P-Channel
Производитель:
|
|
Корзина
|