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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | TrenchMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 8.7A |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) @ Vds | 959pF @ 25V |
Power - Max | 88W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
PHD9NQ20T (MOSFET) N-канальный TrenchMOS™ транзистор
Производитель:
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