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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 4.1A, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 6.8A |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) @ Vgs | 22nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 650pF @ 15V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
IRF7402 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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BZX84C4V7LT1G | ONS |
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BZX84C4V7LT1G | ON SEMICONDUCTOR |
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BZX84C4V7LT1G | ON SEMICONDUCTOR | 3 096 |
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BZX84C4V7LT1G | ON SEMICONDUCTO |
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BZX84C4V7LT1G |
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BZX84C4V7LT1G | ONSEMICONDUCTOR |
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BZX84C5V6-V-GS18 | VISHAY |
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BZX84C5V6-V-GS18 | VISHAY |
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BZX84C5V6-V-GS18 |
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CM453232-330KL | BOURNS |
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CM453232-330KL | 168 |
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CM453232-470KL |
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ЧИП-индуктивность 47 мкГн 1812 | BOURNS | 3 204 | 13.26 | ||
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CM453232-470KL |
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ЧИП-индуктивность 47 мкГн 1812 |
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IRF7478PBF | INTERNATIONAL RECTIFIER |
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IRF7478PBF | INFINEON |
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IRF7478PBF |
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Корзина
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