MMBT3904WT1G
|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 150mW |
| Frequency - Transition | 300MHz |
| Тип монтажа | Поверхностный |
| Корпус (размер) | SC-70, SOT-323 |
| Корпус | SC-70-3 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
 |
 |
A4989SLDTR-T |
|
Allegro Microsystems Inc |
|
|
||
|
|
|
A4989SLDTR-T |
|
ALLEGRO |
|
|
||
|
|
|
A4989SLDTR-T |
|
|
|
|||
| BAT54HT1G | FAIR |
|
|
|||||
| BAT54HT1G | ON SEMICONDUCTOR | 8 | 5.04 | |||||
| BAT54HT1G | FAIRCHILD |
|
|
|||||
| BAT54HT1G | FAIRCHILD |
|
|
|||||
| BAT54HT1G | ON SEMICONDUCTOR | 3 238 |
|
|||||
| BAT54HT1G | Fairchild Semiconductor |
|
|
|||||
| BAT54HT1G |
|
|
||||||
| BAT54HT1G | ONS |
|
|
|||||
| BAT54HT1G | ONS-FAIR |
|
|
|||||
| BAT54HT1G | FUXIN | 24 676 | 1.07 | |||||
| BQ24617RGER | TEXAS INSTRUMENTS |
|
|
|||||
| BQ24617RGER | TEXAS INSTRUMENTS |
|
|
|||||
| BQ24617RGER |
|
|
||||||
| BZV55-C3V9 |
|
Стабилитрон PV=0.5W, Vz=3V9, Izt=5mA tol=5% | NXP |
|
|
|||
| BZV55-C3V9 |
|
Стабилитрон PV=0.5W, Vz=3V9, Izt=5mA tol=5% | DC COMPONENTS | 251 319 | 1.60 | |||
| BZV55-C3V9 |
|
Стабилитрон PV=0.5W, Vz=3V9, Izt=5mA tol=5% | PHILIPS |
|
|
|||
| BZV55-C3V9 |
|
Стабилитрон PV=0.5W, Vz=3V9, Izt=5mA tol=5% | NXP |
|
|
|||
| BZV55-C3V9 |
|
Стабилитрон PV=0.5W, Vz=3V9, Izt=5mA tol=5% | PHILIPS | 592 |
|
|||
| BZV55-C3V9 |
|
Стабилитрон PV=0.5W, Vz=3V9, Izt=5mA tol=5% |
|
|
||||
| BZV55-C3V9 |
|
Стабилитрон PV=0.5W, Vz=3V9, Izt=5mA tol=5% | EIC |
|
|
