BSS138LT1G
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Версия для печати
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 200mA, 5V |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Power - Max | 225mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Possible Adhesion Issue 11/July/2008 Wire Change for SOT23 Pkg 26/May |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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LMC7101AIM5 | TEXAS INSTRUMENTS |
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| MMBTA06LT1G |
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Транзистор | ON SEMICONDUCTOR |
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| MMBTA06LT1G |
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Транзистор | ONS | 15 846 | 3.99 | |||
| MMBTA06LT1G |
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Транзистор | ON SEMICONDUCTOR | 2 988 |
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| MMBTA06LT1G |
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Транзистор | 16 |
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| MMBTA06LT1G |
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Транзистор | ON SEMICONDUCTO |
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| MMBTA06LT1G |
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Транзистор | ONSEMICONDUCTOR |
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