MMUN2113LT1G
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 47K |
| Resistor - Emitter Base (R2) (Ohms) | 47K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 400mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
| Product Change Notification | Wire Change 14/Oct/2008 Possible Adhesion Issue 11/July/2008 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| 1SMA5921BT3G | ONS | 108 | 10.00 | |||||
| 1SMA5921BT3G | ON Semiconductor |
|
|
|||||
| 1SMA5921BT3G |
|
|
||||||
| BC817.215 | NXP |
|
|
|||||
| BC817.215 |
|
|
||||||
| BC817.215 | NEX-NXP |
|
|
|||||
| BCR112E6327 | INFINEON | 344 | 11.22 | |||||
| BCR112E6327 |
|
|
||||||
| BCR112E6327 | INFINEON | 948 |
|
|||||
 |
 |
BZV55-C27,115 |
|
NXP Semiconductors |
|
|
||
|
|
|
BZV55-C27,115 |
|
NXP |
|
|
||
|
|
|
BZV55-C27,115 |
|
NEX |
|
|
||
|
|
NUP2105LT1G |
|
IC CAN BUS PROTECTOR DUAL SOT23 | ON SEMICONDUCTOR |
|
|
||
|
|
NUP2105LT1G |
|
IC CAN BUS PROTECTOR DUAL SOT23 | ONS | 1 271 | 18.86 | ||
|
|
NUP2105LT1G |
|
IC CAN BUS PROTECTOR DUAL SOT23 | 2 320 | 20.82 | |||
|
|
NUP2105LT1G |
|
IC CAN BUS PROTECTOR DUAL SOT23 | ON SEMICONDUCTOR | 94 |
|
||
|
|
NUP2105LT1G |
|
IC CAN BUS PROTECTOR DUAL SOT23 | ONSEMICONDUCTOR |
|
|
||
|
|
NUP2105LT1G |
|
IC CAN BUS PROTECTOR DUAL SOT23 | ON SEMICONDUCTO |
|
|
||
|
|
NUP2105LT1G |
|
IC CAN BUS PROTECTOR DUAL SOT23 | TECH PUB | 43 023 | 4.29 |
