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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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FAIR
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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MOTOROLA
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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ON SEMICONDUCTOR
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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NXP
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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FAIRCHILD
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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FAIRCHILD
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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MOTOROLA
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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NXP
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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ON SEMICONDUCTOR
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2N5550 |
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Транзистор NPN (Uce=140V, Ic=0.6A, P=625mW, B=80-250@I=10mA, f>100MHz, -55 to +150C)
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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16.11
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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3 447
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4.99
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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5 102
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3.85
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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9 600
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1.22
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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1 740
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1.85
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 600
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1.26
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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MCR100-6 |
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Тиристор 400V, 0.8A, Igt=0.2mA
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ON SEMICONDUCTOR
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52
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34.91
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MCR100-6 |
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Тиристор 400V, 0.8A, Igt=0.2mA
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19.48
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MCR100-6 |
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Тиристор 400V, 0.8A, Igt=0.2mA
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UTC
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MCR100-6 |
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Тиристор 400V, 0.8A, Igt=0.2mA
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OTHER
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83
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MCR100-6 |
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Тиристор 400V, 0.8A, Igt=0.2mA
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ONS
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MCR100-6 |
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Тиристор 400V, 0.8A, Igt=0.2mA
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CJ
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СП-1-0,25ВТ-4,7 КОМ-20% |
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ТРУБКА ТЕРМОУСАДОЧНАЯ D 8.0 ПРОЗР. 0.5М |
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ТРУБКА ТЕРМОУСАДОЧНАЯ D 8.0 ПРОЗР. 0.5М |
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ГЕРМАНИЯ
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