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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BA033T |
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ROHM
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BA033T |
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120.00
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BA033T |
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ROHM
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3 472
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BA033T |
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Rohm Semiconductor
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BA033T |
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1
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LM1117DT-3.3 |
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Регулятор напряжения линейный 3.3В, 0.8А
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NATIONAL SEMICONDUCTOR
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LM1117DT-3.3 |
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Регулятор напряжения линейный 3.3В, 0.8А
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118.08
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LM1117DT-3.3 |
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Регулятор напряжения линейный 3.3В, 0.8А
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NSC
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4
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193.80
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LM1117DT-3.3 |
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Регулятор напряжения линейный 3.3В, 0.8А
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NATIONAL SEMICONDUCTOR
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48
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LM1117DT-3.3 |
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Регулятор напряжения линейный 3.3В, 0.8А
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ВЕЛИКОБРИТАНИЯ
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LM1117DT-3.3 |
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Регулятор напряжения линейный 3.3В, 0.8А
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TEXAS INSTRUMENTS
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LM1117DT-3.3 |
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Регулятор напряжения линейный 3.3В, 0.8А
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TEXAS
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LM1117DT-3.3 |
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Регулятор напряжения линейный 3.3В, 0.8А
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NS
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NATIONAL SEMICONDUCTOR
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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1
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180.00
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NSC
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NATIONAL SEMICONDUCTOR
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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ВЕЛИКОБРИТАНИЯ
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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TEXAS INSTRUMENTS
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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TEXAS
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NS
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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NATIONAL
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7
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17.91
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LM1117DT-5.0 |
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СН ``low drop`` (Vout=5.0V, tol=1%, I=0.8A, Vin(max)=20V, Udrop=1.2V@0.8A, 0 to +125C)
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1
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M93C46-WMN6TP |
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Память EEPROM (1K bit (128x8 или 64x16), Microwire-интерфейс, Vcc=2.5-5.5V, 1M циклов, ...
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ST MICROELECTRONICS
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2 540
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12.00
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M93C46-WMN6TP |
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Память EEPROM (1K bit (128x8 или 64x16), Microwire-интерфейс, Vcc=2.5-5.5V, 1M циклов, ...
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41.24
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M93C46-WMN6TP |
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Память EEPROM (1K bit (128x8 или 64x16), Microwire-интерфейс, Vcc=2.5-5.5V, 1M циклов, ...
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ST MICROELECTRONICS SEMI
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2 966
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M93C46-WMN6TP |
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Память EEPROM (1K bit (128x8 или 64x16), Microwire-интерфейс, Vcc=2.5-5.5V, 1M циклов, ...
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STMicroelectronics
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M93C46-WMN6TP |
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Память EEPROM (1K bit (128x8 или 64x16), Microwire-интерфейс, Vcc=2.5-5.5V, 1M циклов, ...
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ST MICROELECTRO
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M93C46-WMN6TP |
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Память EEPROM (1K bit (128x8 или 64x16), Microwire-интерфейс, Vcc=2.5-5.5V, 1M циклов, ...
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STMICROELECTR
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STRW6556A |
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SMPS сх. упpавления, MOSFET
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SANKEN
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STRW6556A |
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SMPS сх. упpавления, MOSFET
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SK
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STRW6556A |
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SMPS сх. упpавления, MOSFET
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542.40
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STRW6556A |
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SMPS сх. упpавления, MOSFET
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КИТАЙ
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Версия для печати
