![]() |
|
Current - Continuous Drain (Id) @ 25° C | 12A |
Drain to Source Voltage (Vdss) | 80V |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 12A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Vgs(th) (Max) @ Id | 4.9V @ 150µA |
Gate Charge (Qg) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2060pF @ 25V |
Power - Max | 2.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | DirectFET™ Isometric MN |
Корпус | DIRECTFET™ MN |
|
Корзина
|