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Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 3.7A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 5.6A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) @ Vds | 520pF @ 25V |
Power - Max | 1.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Корпус | Micro8™ |
IRF7603 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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