MOSFET N-CH 40V 18A 8-SOIC |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 17A, 10V |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 18A |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 4500pF @ 20V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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227M025V 220UF 25V 20% E | ||||||||
CD4001BM96 | TEXAS INSTRUMENTS | |||||||
CD4001BM96 | 4 | 32.40 | ||||||
CD4001BM96 | TEXAS | |||||||
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CD4011BM | Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C | TEXAS INSTRUMENTS | ||||||
CD4011BM | Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C | 50.40 | ||||||
CD4011BM | Стандартная логика QUAD 2-INPUT NAND GATE -55/+125 C | TEXAS | ||||||
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