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FET Type | MOSFET P-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
Input Capacitance (Ciss) @ Vds | 250pF @ 20V |
Power - Max | 1.65W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | SOT-223 |
BSP250 (MOSFET) P-channel enhancement mode vertical D-MOS transistor
Производитель:
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