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Input Capacitance (Ciss) @ Vds | 1543pF @ 25V |
Gate Charge (Qg) @ Vgs | 16nC @ 4.5V |
Vgs(th) (Max) @ Id | 2.4V @ 25µA |
Current - Continuous Drain (Id) @ 25° C | 11A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 11A, 20V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Power - Max | 2.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-PowerVQFN |
Корпус | PQFN (3x3) |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
2РМ22Б10Ш1В1Б |
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2РМ22Б10Ш1В1Б |
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BAT721.215 |
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SMD Шоттки 40V 0,2A | NXP |
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BAT721.215 |
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SMD Шоттки 40V 0,2A | NEX-NXP |
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BAT721.215 |
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SMD Шоттки 40V 0,2A |
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PIC18F45K22-I/PT |
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432.20 | ||||||
PIC18F45K22-I/PT | Microchip Technology |
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PIC18F45K22-I/PT | MICRO CHIP |
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PIC18F45K22-I/PT | MICRO CHIP |
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SF-1206F700-2 |
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Bourns Inc |
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SF-1206F700-2 |
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BOURNS |
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SF-1206F700-2 |
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КТ3130Г9 | 928 | 10.71 | |||||
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КТ3130Г9 | АЛЕКСАНДРОВ |
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КТ3130Г9 | ДАЛЕКС |
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КТ3130Г9 | RUS |
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КТ3130Г9 | МИНСК | 11 | 16.00 | ||||
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КТ3130Г9 | ЭЛЕКС |
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КТ3130Г9 | ИНТЕГРАЛ |
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Корзина
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