MURS240T3G
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Версия для печати
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5µA @ 400V |
| Current - Average Rectified (Io) | 2A |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 2A |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 65ns |
| Тип монтажа | Поверхностный |
| Корпус (размер) | DO-214AA, SMB |
| Корпус | SMB |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| AT24C08C-SSHM-T | ATMEL |
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| AT24C08C-SSHM-T | 7 | 59.98 | ||||||
| AT24C08C-SSHM-T | ATMEL CORPORATION |
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| AT24C08C-SSHM-T | MICRO CHIP | 358 | 19.97 | |||||
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BZX384-C5V1 | PHILIPS |
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BZX384-C5V1 | NXP |
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BZX384-C5V1 |
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5.80 | |||||
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BZX384-C5V1 | PHILIPS | 1 103 |
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| LD1117S50CTR | ST MICROELECTRONICS | 568 | 30.50 | |||||
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70.00 | ||||||
| LD1117S50CTR | ST MICROELECTRONICS SEMI | 81 |
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| LD1117S50CTR | STMicroelectronics |
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| LD1117S50CTR | ST MICROELECTRO |
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| LD1117S50CTR | TEXAS INSTRUMENTS | 8 | 16.92 | |||||
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SS16 (SK16) (1A 60V) |
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Диод |
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STM32F100C8T6B |
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ST MICROELECTRONICS | 501 | 279.53 | ||
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STM32F100C8T6B |
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1 072 | 196.66 | |||
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STM32F100C8T6B |
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STMicroelectronics |
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STM32F100C8T6B |
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МАЛАЙЗИЯ |
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STM32F100C8T6B |
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ST MICROELECTRONICS SEMI |
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STM32F100C8T6B |
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ST MICROELECTRO |
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STM32F100C8T6B |
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STMICROELECTR |
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