IRFP460PBF
Транзистор полевой N-канальный MOSFET (Vds=500V, Id=20A@T=25C, Id=13A@T=100C)
|
|
Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 12A, 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 20A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4200pF @ 25V |
| Power - Max | 280W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-247-3 |
| Корпус | TO-247-3 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
|
IRFP460PBF (MOSFET) HEXFET® Power MOSFET
Производитель:
|
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
 |
 |
1N4007 |
|
DC COMPONENTS | 43 388 | 1.79 | ||
|
|
|
1N4007 |
|
GENERAL SEMICONDUCTOR |
|
|
||
|
|
|
1N4007 |
|
LITE ON OPTOELECTRONICS |
|
|
||
|
|
|
1N4007 |
|
PANJIT |
|
|
||
|
|
|
1N4007 |
|
FSC |
|
|
||
|
|
|
1N4007 |
|
MCC |
|
|
||
|
|
|
1N4007 |
|
DIC |
|
|
||
|
|
|
1N4007 |
|
FAIR |
|
|
||
|
|
|
1N4007 |
|
PHILIPS |
|
|
||
|
|
|
1N4007 |
|
MIC | 250 252 | 1.47 | ||
|
|
|
1N4007 |
|
DIOTEC | 113 256 | 3.05 | ||
|
|
|
1N4007 |
|
ON SEMICONDUCTOR |
|
|
||
|
|
|
1N4007 |
|
LD |
|
|
||
|
|
|
1N4007 |
|
JGD |
|
|
||
|
|
|
1N4007 |
|
MING SHUN |
|
|
||
|
|
|
1N4007 |
|
MS |
|
|
||
|
|
|
1N4007 |
|
QUAN-HONG |
|
|
||
|
|
|
1N4007 |
|
XR |
|
|
||
|
|
|
1N4007 |
|
GALAXY |
|
|
||
|
|
|
1N4007 |
|
COMPACT TECHNOLOGY |
|
|
||
|
|
|
1N4007 |
|
DC COMPONENTS |
|
|
||
|
|
|
1N4007 |
|
FAIRCHILD | 288 |
|
||
|
|
|
1N4007 |
|
GENERAL SEMICONDUCTOR | 1 |
|
||
|
|
|
1N4007 |
|
LITE ON OPTOELECTRONICS |
|
|
||
|
|
|
1N4007 |
|
MASTER INSTRUMENT CORPORATION |
|
|
||
|
|
|
1N4007 |
|
MICRO SEMICONDUCTOR(MICROSEMI) |
|
|
||
|
|
|
1N4007 |
|
ON SEMICONDUCTOR |
|
|
||
|
|
|
1N4007 |
|
PANJIT | 307 692 |
|
||
|
|
|
1N4007 |
|
PHILIPS |
|
|
||
|
|
|
1N4007 |
|
TAIWAN SEMICONDUCTOR MANF. |
|
|
||
|
|
|
1N4007 |
|
YANGJIE SEMICONDUCT |
|
|
||
|
|
|
1N4007 |
|
Fairchild Semiconductor |
|
|
||
|
|
|
1N4007 |
|
SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
|
|
||
|
|
|
1N4007 |
|
MICROSEMI CORP |
|
|
||
|
|
|
1N4007 |
|
ТАЙВАНЬ(КИТАЙ) |
|
|
||
|
|
|
1N4007 |
|
GD |
|
|
||
|
|
|
1N4007 |
|
JC |
|
|
||
|
|
|
1N4007 |
|
KINGTRONICS |
|
|
||
|
|
|
1N4007 |
|
YJ | 240 666 | 1.36 | ||
|
|
|
1N4007 |
|
DIODES INC. |
|
|
||
|
|
|
1N4007 |
|
MIG |
|
|
||
|
|
|
1N4007 |
|
MICRO COMMERCIAL COMPONENTS |
|
|
||
|
|
|
1N4007 |
|
MOTOROLA |
|
|
||
|
|
|
1N4007 |
|
YJ ELE-NIC CORP |
|
|
||
|
|
|
1N4007 |
|
RECTIFIER |
|
|
||
|
|
|
1N4007 |
|
EXTRA COM-NTS |
|
|
||
|
|
|
1N4007 |
|
GALAXY ELECTRICAL |
|
|
||
|
|
|
1N4007 |
|
GEMBIRD |
|
|
||
|
|
|
1N4007 |
|
ТОМИЛИНО |
|
|
||
|
|
|
1N4007 |
|
EXTRA |
|
|
||
|
|
|
1N4007 |
|
КИТАЙ | 800 | 4.54 | ||
|
|
|
1N4007 |
|
DIOTEC SEMICONDUCTOR |
|
|
||
|
|
|
1N4007 |
|
MD |
|
|
||
|
|
|
1N4007 |
|
138 412 |
1.72 >100 шт. 0.86 |
|||
|
|
|
1N4007 |
|
ONS-FAIR |
|
|
||
|
|
|
1N4007 |
|
ONS |
|
|
||
|
|
|
1N4007 |
|
ELZET |
|
|
||
|
|
|
1N4007 |
|
GALAXY ME |
|
|
||
|
|
|
1N4007 |
|
LGE | 15 262 | 1.03 | ||
|
|
|
1N4007 |
|
HOTTECH | 335 831 | 2.61 | ||
|
|
|
1N4007 |
|
KLS | 104 000 | 2.07 | ||
|
|
|
1N4007 |
|
YS |
|
|
||
|
|
|
1N4007 |
|
YANGJIE | 8 800 | 1.58 | ||
|
|
|
1N4007 |
|
YANGJIE (YJ) |
|
|
||
|
|
|
1N4007 |
|
MC |
|
|
||
|
|
|
1N4007 |
|
FAIRCHILD |
|
|
||
|
|
|
1N4007 |
|
WUXI XUYANG |
|
|
||
|
|
|
1N4007 |
|
KUU |
|
|
||
|
|
|
1N4007 |
|
CHINA | 14 485 | 1.09 | ||
|
|
|
1N4007 |
|
SUNRISETRON |
|
|
||
|
|
|
1N4007 |
|
UNKNOWN |
|
|
||
|
|
|
1N4007 |
|
BILIN |
|
|
||
|
|
|
1N4007 |
|
KEHE |
|
|
||
|
|
|
1N4007 |
|
1 |
|
|
||
|
|
|
1N4007 |
|
BL |
|
|
||
|
|
|
1N4007 |
|
SUNTAN | 83 708 | 1.92 | ||
|
|
|
1N4007 |
|
TWGMC | 53 086 |
1.41 >500 шт. 0.47 |
||
|
|
|
1N4007 |
|
CTK |
|
|
||
|
|
|
1N4007 |
|
JUXING | 123 | 2.07 | ||
|
|
|
1N4007 |
|
ASEMI | 2 172 | 1.15 | ||
 |
|
2SK956 |
|
Транзистор полевой N-MOS 800V, 9A, 150W | FUJITSU |
|
|
|
|
|
|
2SK956 |
|
Транзистор полевой N-MOS 800V, 9A, 150W | FUJI ELECTRIC | 4 | 260.82 | |
|
|
|
2SK956 |
|
Транзистор полевой N-MOS 800V, 9A, 150W |
|
228.48 | ||
|
|
|
2SK956 |
|
Транзистор полевой N-MOS 800V, 9A, 150W | FUJI |
|
|
|
|
|
|
2SK956 |
|
Транзистор полевой N-MOS 800V, 9A, 150W | FUJ |
|
|
|
|
|
|
2SK956 |
|
Транзистор полевой N-MOS 800V, 9A, 150W | МАЛАЙЗИЯ |
|
|
|
 |
|
TDA7294 |
|
УHЧ DMOS, 2x70W (2x35V/8 Ом), THD<0.5%, max 2x100W | ST MICROELECTRONICS |
|
|
|
|
|
|
TDA7294 |
|
УHЧ DMOS, 2x70W (2x35V/8 Ом), THD<0.5%, max 2x100W |
|
229.48 | ||
|
|
|
TDA7294 |
|
УHЧ DMOS, 2x70W (2x35V/8 Ом), THD<0.5%, max 2x100W | 4-7 НЕДЕЛЬ | 616 |
|
|
 |
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | HTC KOREA SEMICONDUCTORS |
|
|
|
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | 16 704 | 4.18 | ||
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | ПЛАНЕТА |
|
|
|
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | HTC KOREA SEMICONDUCTORS |
|
|
|
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | HOTTECH | 48 791 | 8.77 | |
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | HTC |
|
|
|
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | ZH | 31 200 | 5.13 | |
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | UMW-YOUTAI |
|
|
|
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | YOUTAI | 9 243 | 2.01 | |
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | UMV | 4 000 | 2.68 | |
|
|
|
TL431 |
|
SMPS усилитель ошибки, 2.5-36V/0.1A | 4-7 НЕДЕЛЬ | 240 |
|
|
| КС527А |
|
металл | 51 | 11.10 | ||||
| КС527А |
|
металл | НОВОСИБИРСК | 502 | 14.70 | |||
| КС527А |
|
металл | НЗПП | 320 | 41.33 |
