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Rds On (Max) @ Id, Vgs | 112 mOhm @ 3.4A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Тип монтажа | Поверхностный |
Power - Max | 2W |
Input Capacitance (Ciss) @ Vds | 1110pF @ 25V |
Gate Charge (Qg) @ Vgs | 37nC @ 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 3.4A |
Drain to Source Voltage (Vdss) | 40V |
Корпус (размер) | Micro6™(TSOP-6) |
Корпус | Micro6™(TSOP-6) |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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LQW18AN33NG00D | MURATA | 2 864 | 9.66 | |||||
LQW18AN33NG00D | MUR | 9 312 | 2.85 | |||||
LQW18AN33NG00D |
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SN74LVC1G08DCKR |
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18.60 | |||||
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SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 2 400 | 11.81 | ||||
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SN74LVC1G08DCKR | TEXAS INSTRUMENTS | 12 148 |
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SN74LVC1G08DCKR | TEXAS |
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SN74LVC1G08DCKR | YOUTAI | 21 775 | 3.15 | ||||
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SN74LVC1G08DCKR | UMW | 216 | 5.90 | ||||
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SN74LVC1G08DCKR | UMW-YOUTAI |
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Корзина
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