Корпус TO-220-3 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 16.5 mOhm @ 31A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 55A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 67nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1812pF @ 25V |
Power - Max | 115W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
IRFZ44V (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
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