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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 29A, 10V |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 55A |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) @ Vgs | 140nC @ 5V |
Input Capacitance (Ciss) @ Vds | 3700pF @ 25V |
Power - Max | 3.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRL2910S 100V Single N-channel HexFET Power MOSFET inA D2-Pak Package
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IRL2910SPBF | Транзистор N-LogL 100V 55A 200W 0,026R D²Pa | INTERNATIONAL RECTIFIER | ||||||
IRL2910SPBF | Транзистор N-LogL 100V 55A 200W 0,026R D²Pa | INTERNATIONAL RECTIFIER | 11 | |||||
IRL2910SPBF | Транзистор N-LogL 100V 55A 200W 0,026R D²Pa | INFINEON | ||||||
IRL2910SPBF | Транзистор N-LogL 100V 55A 200W 0,026R D²Pa | |||||||
LM3488MM/NOPB | NATIONAL SEMICONDUCTOR | 217 | 140.85 | |||||
LM3488MM/NOPB | NSC | |||||||
LM3488MM/NOPB | NATIONAL SEMICONDUCTOR | |||||||
LM3488MM/NOPB | TEXAS INSTR | |||||||
LM3488MM/NOPB | TEXAS INSTRUMENTS | |||||||
LM3488MM/NOPB | TEXAS | |||||||
LM3488MM/NOPB | TEXAS INSTRUMEN | |||||||
LM3488MM/NOPB | TEXAS INSTRUMENTS | 4 | 118.08 | |||||
LM3488MM/NOPB | 1 384 | 123.00 | ||||||
LM3488MM/NOPB | 0.00 | |||||||
PCA82C251T/YM | NXP | |||||||
PCA82C251T/YM | NXP | |||||||
PCA82C251T/YM | ||||||||
PCA82C251T/YM,118 | NXP Semiconductors | |||||||
PCA82C251T/YM,118 | NXP | |||||||
PCA82C251T/YM,118 | NXP | 8 355 | ||||||
PCA82C251T/YM,118 | 208 | 88.40 |
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