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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 110A, 10V |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25° C | 160A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 260nC @ 10V |
Input Capacitance (Ciss) @ Vds | 7580pF @ 25V |
Power - Max | 300W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-7, D²Pak (6 leads + Tab), TO-263CB |
Корпус | D2PAK (7-Lead) |
IRF2907ZS-7PPBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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