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Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
Gate Charge (Qg) @ Vgs | 23nC @ 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 3.6A |
Drain to Source Voltage (Vdss) | 80V |
Rds On (Max) @ Id, Vgs | 73 mOhm @ 2.2A, 10V |
FET Feature | Logic Level Gate |
FET Type | 2 N-Channel (Dual) |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Power - Max | 2W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
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