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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 9.4 mOhm @ 12A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 12A |
Vgs(th) (Max) @ Id | 4.9V @ 100µA |
Gate Charge (Qg) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1560pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
IRF7855PBF (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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IRF7842 |
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Hexfet power mosfets discrete n-channel | INTERNATIONAL RECTIFIER | 56 | 126.00 | |
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IRF7842 |
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Hexfet power mosfets discrete n-channel |
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196.00 | ||
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IRF7842 |
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Hexfet power mosfets discrete n-channel | INFINEON |
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IRF7842 |
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Hexfet power mosfets discrete n-channel | EVVO | 2 388 | 24.39 | |
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LM5642MTC | NATIONAL SEMICONDUCTOR |
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LM5642MTC | NSC |
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LM5642MTC |
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600.00 | |||||
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LM5642MTC | NATIONAL SEMICONDUCTOR | 70 |
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Корзина
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